SiC-Substrate und Epitaxie
SiC für die Leistungselektronik
Herstellung von MOSFETs, IGBTs und anderen Bauteilen für die Hochtemperatur- und Hochfrequenz-Leistungselektronik, die in Elektro- und Hybridfahrzeugen sowie in der Luft- und Raumfahrt zum Einsatz kommt.
Our conductive SiC substrates combine low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.
n-type Silicon Carbide Material Properties
Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.
n-type Silicon Carbide Material Properties |
|
Physical Characteristics |
|
Aufbau |
Hexagonal, Single Crystal |
Diameter |
Up to 200 mm |
Grades |
Prime, Development, Mechanical |
Thermal Properties |
|
Thermal Conductivity |
370 (W/mK) at room temperature |
Thermal Expansion Coefficient |
4.5 x 10-6/K |
Specific Heat (25°C) |
0.71 (J/g°C) |
Additional Key Properties of Coherent SiC Substrates (typical values) |
|
Parameter |
N-type |
Polytype |
4H |
Dotierstoff |
Nitrogen |
Resistivity |
> 1019 Ohm -cm |
Orientation |
4° off-axis |
Roughness, Ra |
<5Å |
Dislocation density |
~3,000 cm-2 |
Micropipe density |
< 10cm-2 |
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